IRF4905S/L
D 2 Pak Package Outline
1.40 (.055)
MAX.
10.54 ( .415)
10.29 ( .405)
-A-
2
4.69 (.185)
4.20 (.165)
-B -
1.32 (.052)
1.22 (.048)
10.16 (.400)
RE F .
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
1
3
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
5.28 (.208)
4.78 (.188)
2.61 (.103)
2.32 (.091)
3X
1.40 (.055)
1.14 (.045)
5.08 ( .200)
3X
0.93 (.037)
0.69 (.027)
0.25 (.010)
M
B A M
0.55 (.022)
0.46 (.018)
1.39 (.055)
1.14 (.045)
8.89 (.350)
RE F.
MINIMUM RECO MM ENDED F OO TP RINT
11.43 (.450)
NO TE S:
1 DIM ENS IO NS AF T ER S OLDE R DIP .
2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982.
3 CO NT RO LLING DIME NSIO N : INCH.
4 HE AT SINK & LEAD DIMEN SION S DO NO T INCLUDE BURRS.
Part Marking Information
D 2 Pak
LE AD ASS IG NM ENT S
1 - G AT E
2 - DRA IN
3 - S OU RC E
8.89 (.350)
3.81 (.150)
2.08 (.082)
2X
17.78 (.700)
2.54 (.100)
2X
IN TER NATION AL
A
PART NU MBER
REC TIFIER
L OGO
AS SEMBLY
LOT CODE
F53 0S
9246
9B 1M
DATE CODE
(YYW W )
YY = YEAR
W W = W EE K
相关PDF资料
IRF510STRLPBF MOSFET N-CH 100V 5.6A D2PAK
IRF510 MOSFET N-CH 100V 5.6A TO-220AB
IRF520NSTRR MOSFET N-CH 100V 9.7A D2PAK
IRF520N MOSFET N-CH 100V 9.7A TO-220AB
IRF520SPBF MOSFET N-CH 100V 9.2A D2PAK
IRF5210L MOSFET P-CH 100V 40A TO-262
IRF5305L MOSFET P-CH 55V 31A TO-262
IRF530A MOSFET N-CH 100V 14A TO-220
相关代理商/技术参数
IRF4905STRRHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 74A 3-Pin(2+Tab) D2PAK T/R
IRF4905STRRPBF 功能描述:MOSFET 1 P-CH -55V HEXFET 20mOhms 120nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF4N60 制造商:SUNTAC 制造商全称:SUNTAC 功能描述:POWER MOSFET
IRF4N60FP 制造商:SUNTAC 制造商全称:SUNTAC 功能描述:POWER MOSFET
IRF500 制造商:未知厂家 制造商全称:未知厂家 功能描述:50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
IRF500C10RJ 制造商:未知厂家 制造商全称:未知厂家 功能描述:50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
IRF510 功能描述:MOSFET N-Chan 100V 5.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF510_R4941 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube